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A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology

Title
A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology
Author
김정현
Keywords
Frequency Doubler; G-Band; GaAs pHEMT; Harmonic Matching
Issue Date
2017-07
Publisher
한국전자파학회
Citation
Journal of Electromagnetic Engineering and Science, v. 17, No. 3, Page. 147-152
Abstract
This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of −5.5 dB and a saturated output power of −7.5 dBm at 184 GHz.
URI
http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07222659http://repository.hanyang.ac.kr/handle/20.500.11754/103452
ISSN
2234-8409
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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