A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology
- Title
- A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology
- Author
- 김정현
- Keywords
- Frequency Doubler; G-Band; GaAs pHEMT; Harmonic Matching
- Issue Date
- 2017-07
- Publisher
- 한국전자파학회
- Citation
- Journal of Electromagnetic Engineering and Science, v. 17, No. 3, Page. 147-152
- Abstract
- This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of −5.5 dB and a saturated output power of −7.5 dBm at 184 GHz.
- URI
- http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07222659https://repository.hanyang.ac.kr/handle/20.500.11754/103452
- ISSN
- 2234-8409
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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