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Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

Title
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
Author
장재영
Keywords
graphene oxide; polystyrene; gate dielectric; low voltage; organic field-effect transistor
Issue Date
2019-01
Publisher
MDPI
Citation
APPLIED SCIENCES-BASEL, v. 9, NO 1, Page. 1-8
Abstract
Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS-a hydrophobic polymer-onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm(-2). The resulting OFETs show high-performance operation with a high mobility of 1.05 cm(2) V-1 s(-1) within a low operating voltage of -5 V.
URI
https://www.mdpi.com/2076-3417/9/1/2http://repository.hanyang.ac.kr/handle/20.500.11754/103395
ISSN
2076-3417
DOI
10.3390/app9010002
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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