Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Abstract

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal oxygen metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal oxygen metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 degrees C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 X 10(9), subthreshold slope of 0.16 V/decade, an average mobility of ˃6.94 cm(2) s(-1), and a bias stability of Delta V-TH ˂ 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.