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Analysis of GaN HEMT-Based Phase Shifted Full Bridge DC-DC Converter

Title
Analysis of GaN HEMT-Based Phase Shifted Full Bridge DC-DC Converter
Author
김희준
Keywords
GaN HEMT; Cascode GaN; Phase shifted dc-dc converter; ZVS failure
Issue Date
2015-10
Publisher
IEEE
Citation
2015 IEEE International Telecommunications Energy Conference (INTELEC), Page. 1268-1272
Abstract
This paper presents the analysis of problem as to when the GaN HEMT (Gallium nitride high electron mobility transistor) is applied to power conversion system. Compared to state-of-the-art super junction Si (Silicon) MOSFET (Metal oxide semiconductor field effect transistor), the FOM (Figure of merit) is much better because of heterojunction structure and wide band gap characteristics. However, designing the power conversion system with GaN HEMT is difficult due to its sensitive threshold voltage. The quite small parasitic capacitance makes it harder to design due to steep dv/dt and di/dt and design factor different from MOSFET as well. In this paper, the printed circuit board layout consideration is analyzed to realize effects of parasitic inductance of power and gate driver loop. In addition, the cause of the ZVS (Zero Voltage Switching) failure is mathematically analyzed as a result of mismatched deadtime. A 600 W phase shifted full bridge dc-dc converter is designed to evaluate effects of parasitic inductance and ZVS failure issues.
URI
http://ieeexplore.ieee.org/document/7572352/http://repository.hanyang.ac.kr/handle/20.500.11754/101806
ISBN
978-1-4799-6582-3
ISSN
2158-5210
DOI
10.1109/INTLEC.2015.7572352
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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