53 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author장재영-
dc.date.accessioned2019-04-12T00:53:13Z-
dc.date.available2019-04-12T00:53:13Z-
dc.date.issued2016-12-
dc.identifier.citationJOURNAL OF MATERIALS CHEMISTRY C, v. 4, NO 47, Page. 11298-11304en_US
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.urihttps://pubs.rsc.org/en/content/articlehtml/2016/tc/c6tc03977d-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/101782-
dc.description.abstractThe realization of high performance solution-processable metal oxide thin-film transistors (TFTs) with low annealing temperatures remains a challenge in the field of flexible and/or transparent electronics. Indium-based metal oxides are one of the most widely used materials as channel layers of metal oxide TFTs. However, the need for developing indium-free metal oxide materials has become urgent because of the high cost and limited supply of indium. Herein, we report high-performance solution-processed indium-free metal oxide TFTs prepared with low annealing temperatures by introducing ZnO/SnO2 bilayer heterostructures. After photo- and thermal annealing, ZnO/SnO2 bilayers form a unique nanostructure composed of three zones: Zn-only, Zn-Sn-mixed, and Sn-rich zones. The resulting ZnO/SnO2 TFTs exhibit outstanding mobility values as high as 15.4 cm(2) V-1 s(-1) with a low annealing temperature of 300 degrees C. These values are the highest yet measured among indium-free and solution processed metal oxide TFTs prepared under similar annealing conditions. The ZnO/SnO2 TFTs also show remarkable outstanding operational stabilities under various external bias stresses. Their high performances and excellent stabilities can be attributed to the combinational effects of the highly conductive ultrathin Sn-rich channel and balanced carrier concentrations in the Zn-Sn-mixed region. We believe that our work provides a facile route to prepare inexpensive solution-processed electronic devices with earth-abundant materials such as backplane circuits for large-area and flexible displays.en_US
dc.description.sponsorshipThis work was supported by the Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0101-16-0133 and B0117-16-1004).en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectDOPED ZNOen_US
dc.subjectFABRICATIONen_US
dc.subjectTRANSPARENTen_US
dc.subjectULTRAVIOLETen_US
dc.subjectACTIVATIONen_US
dc.titleSolution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilitiesen_US
dc.typeArticleen_US
dc.relation.no47-
dc.relation.volume4-
dc.identifier.doi10.1039/c6tc03977d-
dc.relation.page11298-11304-
dc.relation.journalJOURNAL OF MATERIALS CHEMISTRY C-
dc.contributor.googleauthorNam, Sooji-
dc.contributor.googleauthorYang, Jong-Heon-
dc.contributor.googleauthorCho, SungHaeng-
dc.contributor.googleauthorChoi, Ji Hun-
dc.contributor.googleauthorKwon, Oh-Sang-
dc.contributor.googleauthorPark, Eun-Suk-
dc.contributor.googleauthorLee, Su-Jae-
dc.contributor.googleauthorCho, Kyoung-Ik-
dc.contributor.googleauthorJang, Jaeyoung-
dc.contributor.googleauthorHwang, Chi-Sun-
dc.relation.code2016001750-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE