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dc.contributor.author신동수-
dc.date.accessioned2019-03-27T05:09:59Z-
dc.date.available2019-03-27T05:09:59Z-
dc.date.issued2016-11-
dc.identifier.citationIEEE JOURNAL OF QUANTUM ELECTRONICS, v. 52, NO 11, 3300406en_US
dc.identifier.issn0018-9197-
dc.identifier.issn1558-1713-
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/7565506-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/101253-
dc.description.abstractWe present a reliable and fast characterization system that measures the electroluminescence (EL) of light-emitting diodes (LEDs) at the epi-wafer level. This "EL Q-check system" requires simple pre-processes for the measurement, circumventing the full chip-fabrication processes. The developed EL Q-check system consists of three parts: a CO2 laser for p-GaN ablation, a diamond knife for delineating the measurement area on the wafer and isolating the damaged area during the CO2 laser ablation, and the actual EL measurement on the wafer. The accuracy and the usefulness of the EL Q-check system are experimentally tested with eleven LED wafers of different crystal qualities by comparing the EL performances from the proposed system with those of the fully fabricated LED chips. For this purpose, the same wafers were divided in half and test patterns and LED chips were processed, respectively. A surprisingly good correlation between the results obtained by two methods indicates that the developed EL Q-check system can be used for accurate, reliable, and fast epi-wafer evaluation.en_US
dc.description.sponsorshipThis work was supported by the Industrial Strategic Technology Development Program, Development of WPE 75% LED Device Process and Standard Evaluation Technology funded by the Ministry of Trade, Industry and Energy, Korea, under Grant 10041878.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectElectroluminescenceen_US
dc.subjectmetrologyen_US
dc.subjectlight-emitting diodeen_US
dc.subjectepi-waferen_US
dc.subjectQ-check systemen_US
dc.titleWafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodesen_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume52-
dc.identifier.doi10.1109/JQE.2016.2608798-
dc.relation.page4061-4066-
dc.relation.journalIEEE JOURNAL OF QUANTUM ELECTRONICS-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorHang, Dong-Pyo-
dc.contributor.googleauthorShin, Dong-Soo-
dc.relation.code2016002562-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.piddshin-
dc.identifier.researcherIDF-6402-2010-
dc.identifier.orcidhttp://orcid.org/0000-0002-0863-9138-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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