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dc.contributor.author정희준-
dc.date.accessioned2019-03-27T00:24:03Z-
dc.date.available2019-03-27T00:24:03Z-
dc.date.issued2015-07-
dc.identifier.citationACS NANO, v. 9, No. 7, Page. 7697-7703en_US
dc.identifier.issn1936-0851-
dc.identifier.issn1936-086X-
dc.identifier.urihttps://pubs.acs.org/doi/abs/10.1021/acsnano.5b03168-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/101223-
dc.description.abstractWe studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate resistive states and negative differential resistance (NDR) in organic nanocomposite unipolar resistive memory devices. From the analysis of the 1/f(y) type noises, scaling behavior between the relative noise power spectral density (S) over tilde and resistance R was observed, indicating a percolating behavior. Considering a linear rate equation of the charge trapping-detrapping at traps, the percolation behavior and NOR could be understood by the modulation of the conductive phase fraction phi with an external bias. This study can enhance the understanding of the NOR phenomena in organic nanocomposite unipolar resistive memory devices in terms of the current path formation and the memory switching.en_US
dc.description.sponsorshipThe authors appreciate the financial support of the National Creative Research Laboratory program (Grant No. 2012026372) through the National Research Foundation of Korea (NRF), funded by the Korean Ministry of Science, ICT & Future Planning.en_US
dc.language.isoen_USen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectnoise characterizationen_US
dc.subjectorganic memoryen_US
dc.subjectorganic nanocompositeen_US
dc.subjectpercolationen_US
dc.subjectunipolar resistive memoryen_US
dc.subjectMETAL-INSULATOR COMPOSITESen_US
dc.subjectNONVOLATILE MEMORYen_US
dc.subjectDEVICESen_US
dc.subjectINTEGRATIONen_US
dc.subjectELEMENTSen_US
dc.subjectTRAPSen_US
dc.title1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memoryen_US
dc.typeArticleen_US
dc.relation.no7-
dc.relation.volume9-
dc.identifier.doi10.1021/acsnano.5b03168-
dc.relation.page7697-7703-
dc.relation.journalACS NANO-
dc.contributor.googleauthorSong, Younggul-
dc.contributor.googleauthorJeong, Hyunhak-
dc.contributor.googleauthorJang, Jingon-
dc.contributor.googleauthorKim, Tae-Young-
dc.contributor.googleauthorYoo, Daekyoung-
dc.contributor.googleauthorKim, Youngrok-
dc.contributor.googleauthorJeong, Heejun-
dc.contributor.googleauthorLee, Takhee-
dc.relation.code2015000639-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhjeong-
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