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Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

Title
Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers
Author
박재근
Keywords
MAGNETIC-ANISOTROPY; MAGNETORESISTANCE; JUNCTIONS
Issue Date
2016-10
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 109, NO 18, 182405
Abstract
A tunneling magneto-resistance (TMR) ratio of similar to 163% at an annealing temperature of 400 degrees C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of similar to 141% at an annealing temperature of 400 degrees C and a thermal stability at room temperature of similar to 61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (H-k). Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4967172http://repository.hanyang.ac.kr/handle/20.500.11754/101156
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4967172
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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