Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 설원제 | - |
dc.date.accessioned | 2019-03-25T01:18:27Z | - |
dc.date.available | 2019-03-25T01:18:27Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 27, no. 50, page. 1-7 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/0957-4484/27/50/505205/meta | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/101132 | - |
dc.description.abstract | The doping effect on graphene by photoresists were studied in this article. Polymethyl methacrylate (PMMA) is the usual choice for graphene transfer, but it is known to leave a significant amount of residue. PMMA results in strong hole doping and reduction of mobility of the graphene devices. Not only PMMA, but photoresists also leave residues during the lithographic steps and dope the graphene in strong hole-doping states along with water and oxygen molecules. In this article, we tested three types of photoresists for their effects on graphene's electrical properties. It was found that a specific photoresist can significantly reduce the amount of hole-doping of the graphene transistor more than other photoresists. The use of hydrophobic substrates and additional thermal treatment can help reducing the hole-doping further. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program in the National Research Foundation (NRF) in the Ministry of Education of Korea (NRF-2014R1A1A2053599), by a grant funded by NRF of the Ministry of Education of Korea (NRF-2014M3A7B4049369), by Nano Material Technology Development Program (NRF-2012M3A7B4035198) in NRF in the Ministry of Education of Korea, and by Priority Research Centers Program through NRF funded by the Ministry of Education of Korea (NRF-2012R1A6A1029029). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | graphene | en_US |
dc.subject | transistor | en_US |
dc.subject | photolithography | en_US |
dc.subject | polycarbonate | en_US |
dc.subject | thermal treatment | en_US |
dc.title | Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/27/50/505205 | - |
dc.relation.page | 505205-505205 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Sul, Onejae | - |
dc.contributor.googleauthor | Kim, Kyumin | - |
dc.contributor.googleauthor | Choi, Eunseok | - |
dc.contributor.googleauthor | Kil, Joonpyo | - |
dc.contributor.googleauthor | Park, Wanjun | - |
dc.contributor.googleauthor | Lee, Seung-Beck | - |
dc.relation.code | 2016001290 | - |
dc.sector.campus | S | - |
dc.sector.daehak | RESEARCH INSTITUTE[S] | - |
dc.sector.department | INSTITUTE OF NANO SCIENCE AND TECHNOLOGY | - |
dc.identifier.pid | ojsul | - |
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