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dc.contributor.author심상완-
dc.date.accessioned2019-03-07T00:55:16Z-
dc.date.available2019-03-07T00:55:16Z-
dc.date.issued2016-02-
dc.identifier.citationNATURE COMMUNICATIONS, v. 7, Article no. 10768en_US
dc.identifier.issn2041-1723-
dc.identifier.urihttps://www.nature.com/articles/ncomms10768-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/100555-
dc.description.abstractThe 1s exciton—the ground state of a bound electron-hole pair—is central to understanding the photoresponse of monolayer transition metal dichalcogenides. Above the 1s exciton, recent visible and near-infrared investigations have revealed that the excited excitons are much richer, exhibiting a series of Rydberg-like states. A natural question is then how the internal excitonic transitions are interrelated on photoexcitation. Accessing these intraexcitonic transitions, however, demands a fundamentally different experimental tool capable of probing optical transitions from 1s ‘bright’ to np ‘dark’ states. Here we employ ultrafast mid-infrared spectroscopy to explore the 1s intraexcitonic transitions in monolayer MoS2. We observed twofold 1s→3p intraexcitonic transitions within the A and B excitons and 1s→2p transition between the A and B excitons. Our results revealed that it takes about 0.7 ps for the 1s A exciton to reach quasi-equilibrium; a characteristic time that is associated with a rapid population transfer from the 1s B exciton, providing rich characteristics of many-body exciton dynamics in two-dimensional materials.en_US
dc.description.sponsorshipS. Cha, S. Sim, J. Park and H. Choi were supported by the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grants No. NRF-2011-0013255, NRF-2009-0083512, NRF-2015R1A2A1A10052520), Global Frontier Program (2014M3A6B3063709), the Yonsei University Yonsei-SNU Collaborative Research Fund of 2014 and the Yonsei University Future-leading Research Initiative of 2014. J.H.S., H.H. and M.-H.J. were supported by Institute for Basic Science (IBS), Korea under the contract number of IBS-R014-G1-2016-a00.en_US
dc.language.isoen_USen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.subjectTRANSITION-METAL DICHALCOGENIDESen_US
dc.subjectGIANT BANDGAP RENORMALIZATIONen_US
dc.subjectGAAS QUANTUM-WELLSen_US
dc.subjectSINGLE-LAYER MOS2en_US
dc.subjectMONO LAYERen_US
dc.subjectTUNGSTEN DISULFIDEen_US
dc.subjectCARRIER DYNAMICSen_US
dc.subjectSTATESen_US
dc.subjectHETEROSTRUCTURESen_US
dc.subjectWSE2en_US
dc.title1s intraexcitonic dynamics in monolayer MoS2 probed by ultrafast mid-infrared spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/ncomms10768-
dc.relation.journalNATURE COMMUNICATIONS-
dc.contributor.googleauthorCha, Soonyoung-
dc.contributor.googleauthorSung, Ji Ho-
dc.contributor.googleauthorSim, Sangwan-
dc.contributor.googleauthorPark, Jun-
dc.contributor.googleauthorHeo, Hoseok-
dc.contributor.googleauthorJo, Moon-Ho-
dc.contributor.googleauthorChoi, Hyunyong-
dc.relation.code2016003600-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidswsim-
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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