Atomic resolution quality control for Fin oxide recess by atomic resolution profiler

Title
Atomic resolution quality control for Fin oxide recess by atomic resolution profiler
Author
김태곤
Keywords
Atomic Force Microscopy; Atomic Resolution Profiler; FinFET; In-Line Monitoring; Metrology; Oxide Recess
Issue Date
2016-09
Publisher
Scientific.net
Citation
Solid State Phenomena, v. 255, Page. 304-308
Abstract
A non-destructive metrology technique for critical dimension of Fin structure is important for better device characterization and development for improving yield. Due to extremely small dimension with high complexity in FinFET a new metrology solution needs to be evaluated. In-line atomic resolution profiler was performed to provide a suitable metrology for oxide recess metrology in Fin process. The technique could measure accurately the height and CD of Fin structures, which has the space with of 25 nm and the height of 60 nm. The uniformity of recess height could be measured, which could be interpreted by loading effect of etch process. High long term repeatability of the technique was achieved for process monitoring purpose. © 2016 Trans Tech Publications, Switzerland.
URI
https://www.scientific.net/SSP.255.304http://repository.hanyang.ac.kr/handle/20.500.11754/100527
ISSN
1662-9779
DOI
10.4028/www.scientific.net/SSP.255.304
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ETC
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