TY - JOUR AU - 박재근 DA - 2014/02 PY - 2014 UR - http://jcpr.kbs-lab.co.kr/file/JCPR_vol.15_2014/JCPR15-1/12.pdf UR - https://repository.hanyang.ac.kr/handle/20.500.11754/70662 AB - Strained silicon-on-insulator (sSOI) substrates were characterized using multi-wavelength, high resolution, polychromator-based micro Raman spectroscopy and normal incidence optical reflectance spectra measurement. Significant Raman shifts towards the lower wavenumber side, corresponding to tensile stress, and broadening of the Raman peak in sSOI thin films were observed. The stress and crystallinity of sSOI were characterized from the shift and full-width-at-half-maximum data. The thickness of strained Si and buried oxide film of sSOI was estimated from the optical reflectance. Multi-wavelength Raman and optical reflectance measurement, when used together provide a useful and practical non-destructive stress, and structural characterization technique for nano-scale sSOI. PB - KOREAN ASSOC CRYSTAL GROWTH, INC, SUNGDONG POST OFFICE, P O BOX 27, SEOUL 133-600, SOUTH KOREA KW - Strained Si KW - sSOI KW - SOI KW - Multi-wavelength KW - Raman KW - Reflectance KW - Strain KW - SI KW - SPECTROSCOPY KW - SCATTERING KW - LAYERS TI - Characterization of nano-scale strained silicon-on-insulator substrates by multi-wavelength high resolution micro-raman and optical reflectance VL - 15 T2 - JOURNAL OF CERAMIC PROCESSING RESEARCH ER -