TY - JOUR AU - 이정호 DA - 2016/09 PY - 2016 UR - https://www.sciencedirect.com/science/article/pii/S0040609016305284 UR - https://repository.hanyang.ac.kr/handle/20.500.11754/69311 AB - A large amount of external overpotential is normally required to split water using p-type silicon (p-Si) due to the insufficient driving force between the conduction band-edge and the hydrogen evolution level. We demonstrate how inserting an Al2O3 interlayer between p-Si and the electrolyte mitigates the requirement of overpotentials. Since the Al2O3 film decreased the number of interface defect states, electrons were observed to migrate into the Si surface so that negative charges accumulated at the band-edge of silicon. This resulted in band bending enhancement and a reduction of the overpotential requirement. In our result, the overpotential of similar to 150 mV was reduced at a current density of 20 mA/cm(2), and the onset voltage of similar to 70 mV was also reduced at the 1.4 nm thickness of Al2O3 interlayer. (C) 2016 Elsevier B.V. All rights reserved. PB - ELSEVIER SCIENCE SA KW - Silicon KW - Photocathode KW - Aluminum oxide interlayer KW - Hydrogen evolution reaction KW - Photoelectrochemical cell KW - Water splitting KW - ATOMIC LAYER DEPOSITION KW - H-2 EVOLUTION KW - WATER OXIDATION KW - SILICON KW - CATALYST KW - PHOTOCATHODE KW - PERFORMANCE KW - GENERATION KW - CELLS KW - TIO2 TI - Improved photoelectrochemical hydrogen evolution using a defect-passivated Al2O3 thin film on p-Si VL - 616 DO - 10.1016/j.tsf.2016.09.020 T2 - THIN SOLID FILMS ER -