TY - JOUR AU - 박진성 DA - 2014/05 PY - 2014 UR - https://aip.scitation.org/doi/10.1063/1.4875044 UR - http://hdl.handle.net/20.500.11754/45876 AB - Semiconducting properties and electronic structures of amorphous GaZnSnO (GZTO) thin films are investigated with respect to metal cationic composition. An increase of the cationic Sn ratio resulted in an increase of the carrier concentration and a decrease of the mobility of the films. Combinatorial analysis revealed that the electrical characteristics of GZTO films are strongly correlated to changes in electronic structure. The increase in carrier concentration is related to the generation of vacancies by the changes of oxygen coordination around the cationic metal and the shallow band edge state below the conduction band. On the other hand, the decrease of mobility can be explained by the deep band edge state, and the difference between the experimental conduction band and simulated conduction band by the combinatorial electronic structure based on the chemical composition. (C) 2014 AIP Publishing LLC. PB - AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA KW - OXIDE TI - Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures IS - 18 VL - 104 DO - 10.1063/1.4875044 T2 - APPLIED PHYSICS LETTERS ER -