TY - JOUR AU - 김현우 DA - 2012/08 PY - 2012 UR - http://www.sciencedirect.com/science/article/pii/S0008622312003193?via%3Dihub AB - Nitrogen (N) was doped into graphene oxide (GO) films at temperatures of 600-900 degrees C under the flow of a mixture of NH3 and Ar. The N (atomic) concentration was varied in the range of 3.63-7.45%. XPS and FTIR spectra show that there are mainly single C-N and double C=N bonds in the GO sheet. Raman spectra indicate that the G band becomes closer to the position of the G band of graphite with increasing doping temperature, and thus reveal that N doping produces a blue-shift of the G-band. In room-temperature photoluminescence (PL) spectra, N-doping produces an increase not only in the overall PL intensity, but also in the wavelength of the peak maxima. The shift of the induced PL of N-doped graphene is attributed mainly to the increased number of graphitic (or quaternary) N. (c) 2012 Elsevier Ltd. All rights reserved. PB - Elsevier Science B.V., Amsterdam KW - NITROGEN-DOPED GRAPHENE KW - CARBON NANOTUBES KW - GRAPHITE OXIDE KW - PHYSICAL-PROPERTIES KW - OXYGEN REDUCTION KW - THIN-FILMS KW - GROWTH KW - DISPERSIONS KW - DEPOSITION KW - SHEETS TI - Influence of N-doping on the structural and photoluminescence properties of graphene oxide films IS - 10 VL - 50 DO - 10.1016/j.carbon.2012.04.005 T2 - CARBON ER -