TY - JOUR AU - 김동욱 DA - 2007/10 PY - 2007 UR - http://www.jkps.or.kr/journal/view.html?uid=9050&vmd=Full UR - https://repository.hanyang.ac.kr/handle/20.500.11754/106984 AB - We report studies of resistance switching characteristics of Pt/FeOx/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and alpha-Fe2O3 phase was formed at annealing temperatures >= 400 degrees C. The electroforming process, usually occurring at 7 similar to 10 V, increased the conductivity of the structure significantly(> 10(2)) and brought About reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeO, films exhibited reliable memory switching behaviors. PB - KOREAN PHYSICAL SOC KW - resistance switching KW - iron oxides KW - electroforming TI - Resistance Switching in Electroformed Pt/FeOx/Pt Structures DO - 10.3938/jkps.51.96 T2 - JOURNAL OF THE KOREAN PHYSICAL SOCIETY ER -