박재근
2018-04-25T09:31:18Z
2018-04-25T09:31:18Z
2011-06
THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY,Vol.58, No.6 [2011],1633-1637(5쪽)
0374-4884
http://www.jkps.or.kr/journal/view.html?volume=58&number=6&spage=1633&year=2011
https://repository.hanyang.ac.kr/handle/20.500.11754/70435
We determined the effects of the evaporation rate of the Ni layer and the presence of in-situ O<SUB>2</SUB> plasma oxidation on the physical and the chemical structures of Ni nanocrystals embedded in smallmolecule (Alq_3: aluminum tris(8-hydroxyquinoline)) memorycells. The Ni nanocrystals produced by an evaporation rate of 0.1 Å/s for the Ni layer with in-situ O_2 plasma oxidation were well isolated from one another by a NiO tunneling barrier. The small-molecule memorycell embedded with isolated Ni nanocrystals surrounded by a NiO tunneling barrier demonstrated a memory margin (I_(on)/I_(off) ratio) of ?1 × 10^3, a retention time of more than 10^5 sec, and an endurance of more than 2 × 10^2 erase-and-program cycles.
This research was supported by "The National Research Program for Terabit Nonvolatile Memory Development" sponsored by the Korean Ministry of Knowledge Economy.
en
한국물리학회
Nonvolatile memory
Physical structure
Ni nanocrystal
TUNNELING BARRIER
BISTABILITY
DEVICES
Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memorycells Embedded with Ni Nanocrystals
Article
6
58
10.3938/jkps.58.1633
1633-1637
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Park, Jea-Gun
Nam, Woo-Sik
2011205987
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
parkjgl