이승백
2018-04-19T07:21:44Z
2018-04-19T07:21:44Z
2012-03
Journal of Applied Physics, 2012, 111(7), 07C722
0021-8979
1089-7550
https://aip.scitation.org/doi/10.1063/1.367915
https://repository.hanyang.ac.kr/handle/20.500.11754/69464
We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 degrees and 30 degrees, at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k Omega junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679153]
This work was supported by the IT R&D program of MKE/KEIT (KI002189, Technology Development of 30 nm level High Density Perpendicular STT-MRAM).
en
Amer INST Physics
PERPENDICULAR-ANISOTROPY
Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage
Article
7
111
10.1063/1.367915
1-1
JOURNAL OF APPLIED PHYSICS
Chun, S.-w.
Kim, D.
Kwon, J.
Kim, B.
Choi, S.
Lee, S.-B.
2012204664
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
sbl22