권오경
2018-04-16T02:22:51Z
2018-04-16T02:22:51Z
2012-03
Japanese Journal of Applied Physics, Vol.51, No.3 P2 [2012], p03CD01-1 ~ 03CD01-4
0021-4922
http://iopscience.iop.org/article/10.1143/JJAP.51.03CD01/meta
http://hdl.handle.net/20.500.11754/67504
A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.
en
IOP Science
PIXEL CIRCUITS
Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays
Article
51
10.1143/JJAP.51.03CD01
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JAPANESE JOURNAL OF APPLIED PHYSICS
Oh, K.
Kwon, O.-K.
2012217131
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
okwon
7402196067