이승백
2018-03-23T02:37:02Z
2018-03-23T02:37:02Z
2012-12
Journal of Vacuum Science & Technology. B, 2012, 30(6), P.06FA01
1071-1023
2166-2746
https://avs.scitation.org/doi/10.1116/1.4767123
http://hdl.handle.net/20.500.11754/51087
The authors have demonstrated fabrication of 30 nm diameter perpendicular anisotropy magnetic tunnel junctions (MTJs) using negative electron-beam resist (NER) as the ion beam etching (IBE) hard mask. The NER pillar of 30 nm diameter and 105 nm thickness was fabricated by electron-beam lithography. The redeposition of the MTJ etching debris generated during the IBE on the outer surface of the NER pillar increased the lateral etch resistance of the resist polymer, allowing the edge profile to remain constant for the duration of the MTJ etching, resulting in a vertical MTJ sidewall profile. A multistep IBE (repetition of 45 degrees primary etching and 30 degrees secondary etching) was conducted to reduce the MTJ sidewall redeposition while reducing mechanical damage. The measurement results showed a tunnel magneto-resistance ratio of 22% at 30 nm junction diameter. (C) 2012 American Vacuum Society. [http://dx.doi.org.access.hanyang.ac.kr/10.1116/1.4767123]
This work was supported by the IT R&D program of MKE/MEIT (KI002189, Technology Development of 30 nm level High Density Perpendicular STT-MRAM), and also by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012029029).
en
American Vacuum Society; 1999
PERPENDICULAR-ANISOTROPY
EFFECT TRANSISTOR
PLASMA
ELEMENTS
Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions
Article
6
30
10.1116/1.4767123
1-5
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Chun, SungWoo
Kim, Daehong
Kwon, Jihun
Kim, Bongho
Lee, Hyungyu
Lee, SeungBeck
2012206100
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
sbl22