박재근
2018-03-23T05:54:11Z
2018-03-23T05:54:11Z
2014-04
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 권: 64 호: 7 , 페이지: L949-L953
0374-4884
1976-8524
https://link.springer.com/article/10.3938/jkps.64.949
http://hdl.handle.net/20.500.11754/51330
We developed a conductive-bridging random-access memory cell with a sandwiched structure of an Ag top electrode, an electrolyte (polyethylene oxide: PEO), and a Pt bottom electrode on a 250-nm hole pattern. The cell demonstrated the bipolar switching behavior of resistive randomaccess memory. The nonvolatile characteristics of the cell strongly depended on the wt% (PEO thickness): i.e., maximum memory characteristics, such as a retention-time of > 1 x 10(5) s with a memory margin of 1 x 10(4) and program/erase cycles of > 10(3) with a memory margin of 1.3 x 10(4), which are very close to thereof a commercial memory cell, were observed at a specific wt% of PEO (0.4 wt%)
This work was financially supported by the Brain Korea 21 Plus Program in 2014 and the Industrial Strategic Technology Development Program (10039191, The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.
en
KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
RESISTIVE SWITCHING CHARACTERISTICS
BIPOLAR
UNIPOLAR
Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode
Article
64
10.3938/jkps.64.949
949-953
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Seung, Hyun-Min
Song, Myung-Jin
Park, Jea-Gun
Kwon, Kyoung-Cheol
2014034856
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
parkjgl