박진성
2018-03-15T01:16:24Z
2018-03-15T01:16:24Z
2016-04
APPLIED SURFACE SCIENCE, v. 383, Page. 1-8
0169-4332
1873-5584
https://www.sciencedirect.com/science/article/pii/S0169433216308728?via%3Dihub
http://hdl.handle.net/20.500.11754/46904
In2O3 thin films were grown from a newly developed, liquid, homoleptic, In-based complex, tris(1-dimethylamino-2-methyl-2-propoxy) indium [In(dmamp)(3)], and O-3 by atomic layer deposition (ALD) at growth temperatures of 150-200 degrees C. In(dmamp)(3) exhibited single-step evaporation with negligible residue and excellent thermal stability between 30 and 250 degrees C. The self-limiting surface reaction of In2O3 during ALD was demonstrated by varying the In(dmamp)(3) and O-3 pulse lengths, with a growth rate of 0.027 nm/cycle achieved at 200 degrees C. The In2O3 films grown at temperatures over 175 degrees C exhibited negligible concentrations of impurities, whereas that grown below 175 degrees C had concentrations of residual C of 6-8 at.%. Glancing angle X-ray diffraction revealed that the In2O3 films were polycrystalline in nature when the deposition temperature was greater than 200 degrees C. The In2O3 films grown at 150-200 degrees C exhibited carrier concentrations of 1.5 x 10(18)-6.6 x 10(19) cm(-3), resistivities of 15.1-2 x 10(-3) Omega cm, and Hall mobilities of 0.8-42 cm(2)/(V s). (C) 2016 Published by Elsevier B.V.
We would like to acknowledge the financial support from the R&D Convergence Program of MSIP (Ministry of Science, ICT and Future Planning) and NST (National Research Council of Science & Technology) of Republic of Korea (Grant. Convergence Practical Research Project-13-18-KRICT).
en
ELSEVIER SCIENCE BV
Novel In precursor
Atomic layer deposition
Indium oxide
Thin film
Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands
Article
383
10.1016/j.apsusc.2016.04.120
1-8
APPLIED SURFACE SCIENCE
Han, Jeong Hwan
Jung, Eun Ae
Kim, Hyo Yeon
Kim, Da Hye
Park, Bo Keun
Park, Jin-Seong
Son, Seung Uk
Chung, Taek-Mo
2016002050
S
COLLEGE OF ENGINEERING[S]
DIVISION OF MATERIALS SCIENCE AND ENGINEERING
jsparklime