박재근
2018-03-01T04:54:16Z
2018-03-01T04:54:16Z
2013-01
ECS Journal of Solid State Science and Technology, 2013, 2(1), P.26-P30
2162-8769
http://jss.ecsdl.org/content/2/1/P26
http://hdl.handle.net/20.500.11754/41462
We investigated effect of oxidizers on chemical mechanical planarization (CMP) of ruthenium (Ru). Several commonly used oxidizers with different standard reduction potentials were used in the Ru CMPtest, and their corrosion behaviors and states of surface oxidation were analyzed. We found that Ru only had a high polishing rate with slurries containing sodium periodate and sodium hypochlorite. We also observed that Ru film underwent severe pitting corrosion with these slurries, and formed a porous RuO3/RuO2 oxide layer. Ru film was unable to achieve high corrosion current density as well as form a porous RuO3/RuO2 oxide layer except for these two oxidizers. Both the corrosion and oxidation (formation of RuO3/RuO2 layer) processes influenced the Ru polishing rate, but the oxidation process was assumed to play a more decisive role in the Ru CMP. The mechanism for the types of oxidizers in Ru corrosion and oxidation processes is discussed and explained through a diagram of the equilibrium electronic band of Ru metal electrodes and oxidizers in an aqueous solution. (C) 2012 The Electrochemical Society. All rights reserved.
Hanyang University Samsung Electronics Co. Ltd.Korean Ministry of Knowledge and EconomyBrain Korea 21 Project
en
Electrochemical SOC INC
SODIUM PERIODATE
COPPER
CMP
SPECTROSCOPY
PERFORMANCE
REMOVAL
ENERGY
RUCMP
PH
Effect of Oxidizers on Chemical Mechanical Planarization of Ruthenium with Colloidal Silica Based Slurry
Article
1
2
10.1149/2.030301jss
26-30
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Cui, Hao
Park, Jin-Hyung
Park, Jea-Gun
2013054731
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
parkjgl