박재근
2018-03-17T02:37:04Z
2018-03-17T02:37:04Z
2012-02
Advanced Functional Materials, Feb 2012, 22(4), P.709-716, 8P.
1616-301X
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201102362/abstract
Developing a means by which to compete with commonly used Si-based memory devices represents an important challenge for the realization of future three-dimensionally stacked crossbar-array memory devices with multifunctionality. Therefore, oxide-based resistance switching memory (ReRAM), with its associated phenomena of oxygen ion drifts under a bias, is becoming increasingly important for use in nanoscalable crossbar arrays with an ideal memory cell size due to its simple metalinsulatormetal structure and low switching current of 10100 mu A. However, in a crossbar array geometry, one single memory element defined by the cross-point of word and bit lines is highly susceptible to unintended leakage current due to parasitic paths around neighboring cells when no selective devices such as diodes or transistors are used. Therefore, the effective complementary resistive switching (CRS) features in all Ti-oxide-based triple layered homo Pt/TiOx/TiOy/TiOx/Pt and hetero Pt/TiOx/TiON/TiOx/Pt geometries as alternative resistive switching matrices are reported. The possible resistive switching nature of the novel triple matrices is also discussed together with their electrical and structural properties. The ability to eliminate both an external resistor for efficient CRS operation and a metallic Pt middle electrode for further cost-effective scalability will accelerate progress toward the realization of cross-bar ReRAM in this framework.
en
Wiley
resistive switching
memory devices
oxygen ion movement
Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks
TiOy
Article
4
22
10.1002/adfm.201102362
709-716
ADVANCED FUNCTIONAL MATERIALS
Bae, Yoon-Cheol
Lee, Ah-Rahm
Kwon, Kyung-Cheol
Hong, Jin-Pyo
Lee, Ja-Bin
Koo, Ja-Hyun
Park, Jea-Gun
Im, Hyun-Sik
2012200210
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
parkjgl