이해원
2016-08-03T06:00:15Z
2016-08-03T06:00:15Z
2015-02
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, NO 2, Page. 1764-1766
1533-4880
1533-4899
http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000002/art00132
http://hdl.handle.net/20.500.11754/22366
Photoacid generators (PAGs) have been widely used as a key component for improving photoresist performance. The acid diffusion influences on the photoresist characteristics of resolution and line edge roughness (LER). The PAG bound polymer resist has been a key component for solving the problems of PAG aggregation and acid diffusion control. A triphenyl sulfonium salt methacrylate as PAG was synthesized and copolymerized with crosslinkable glycidyl methacrylate and methyl methacrylate by radical reaction for a new PAG bound polymer resist. The characterization of resist polymers was carried out by H-1 NMR. The lithographic performance of photoresists was investigated by ArF lithography. Both PAG bound resist and the PAG blended resist were employed to demonstrate the effect of PAG unit in a resist system. The polymer bound PAG resist improved the LEA and showed a higher resolution than the PAG blend resist.
Technology Innovation Program - Ministry of Knowledge and Economy (MKE, Korea) Priority Research Centers Program through National Research Foundation (NRF) of Korea
en
AMER SCIENTIFIC PUBLISHERS
Polymer Bound PAG Resist
Photoacid Generator
ArF Lithography
Negative Type Photoresist
Enhanced Acid Diffusion Control by Using Photoacid Generator Bound Polymer Resist
Article
2
15
10.1166/jnn.2015.9330
1764-1766
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Jung, Jin Hyuck
Kim, Min Jeong
Sohn, Kyung Hwa
Kang, Ha Na
Kang, Man Kyu
Lee, Haiwon
2015003357
S
COLLEGE OF NATURAL SCIENCES[S]
DEPARTMENT OF CHEMISTRY
haiwon