홍진표
2016-05-24T04:34:48Z
2016-05-24T04:34:48Z
2015-01
ACTA MATERIALIA, NO 87, Page. 259-265
1359-6454
1873-2453
http://hdl.handle.net/20.500.11754/21287
http://www.sciencedirect.com/science/article/pii/S1359645415000269
Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300 °C and the need of an ultrathin CoFeB layer of approximately 1.3 nm. Thus, the ability to enhance thermally strong PMA characteristics is still a key step toward extending their use. Here, we examine the effect of W layers on PMA features through both W buffer/CoFeB/MgO and MgO/CeFeB/W capping frames at various annealing temperatures. Highly stable PMA was achieved up to 450 °C at a specific W thickness, along with the presence of the dominant PMA properties at a relatively thick CoFeB greater than 1.3 nm and the achievement of a high Keff of approximately 5 Merg/cc.
This research was supported by a Grant from the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2060350).
en
PERGAMON-ELSEVIER SCIENCE LTD
Perpendicular magnetic anisotropy (PMA)
Interface anisotropy
CoFeB/MgO
Annealing stability
B diffusion
Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers
Article
87
10.1016/j.actamat.2015.01.022
259-265
ACTA MATERIALIA
An, Gwang-Guk
Lee, Ja-Bin
Yang, Seung-Mo
Kim, Jae-Hong
Chung, Woo-Seong
Hong, Jin-Pyo
2015002934
S
COLLEGE OF NATURAL SCIENCES[S]
DEPARTMENT OF PHYSICS
jphong