오혜근
2019-07-18T07:11:24Z
2019-07-18T07:11:24Z
2006-02
Proceedings of SPIE - The International Society for Optical Engineering; SPIE 31st International Symposium on Advanced Lithography, v. 6152, Article no. 61524B
978-081946195-7
0277-786X
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6152/61524B/The-effect-of-transmission-reduction-by-reticle-haze-formation/10.1117/12.656284.full?SSO=1
https://repository.hanyang.ac.kr/handle/20.500.11754/107647
Recently, a pattern size gradually has reduced to enhance the integration of semiconductor device. As minimum line widths have shrunk, the exposure wavelength has also progressively shrunk. The exposure wavelengths have been reduced progressively from 436 nm to 365 nm to 248 nm to 193 nm. Expose wavelength shrink caused some serious problems. One of the problems to be solved is growing defect in the reticle during the process. Reticle growing defect is called a haze. Haze is formed around the pellicle, on the quartz side of the mask and on the chrome side of the mask. In this investigation, mask haze is intentionally formed on the backside of mask by 193 nm laser irradiation. And the thickness is measured by the spectroscopic ellipsometry. This paper describes the relationship between transmittance and the haze formation, photochemical reactions and the haze effect on the process latitude. In addition, throughput is decreased due to haze formation.
en_US
SPIE
193 nm excimer laser
Haze defect
Spectroscopic ellipsometry
Thickness
The effect of transmission reduction by reticle haze formation
Article
10.1117/12.656284
Kim, Sung-Jin
Kyoung, Jai-Sun
Park, Jin-Back
Kim, Young-Hoon
Park, Seung-Wook
An, Il-Sin
Oh, Hye-Keun
E
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]
DEPARTMENT OF APPLIED PHYSICS
hyekeun