오혜근
2019-06-28T07:00:44Z
2019-06-28T07:00:44Z
2007-09
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 46, No. 9B, Page. 6124-6127
0021-4922
https://iopscience.iop.org/article/10.1143/JJAP.46.6124
https://repository.hanyang.ac.kr/handle/20.500.11754/106933
ArF immersion lithography may be the best candidate for sub-60 run device patterning. However, the polarization effect is the most prominent root cause for the degradation of the image quality in high numerical aperture (NA) immersion lithography as the feature size shrinks. Therefore, it is important to understand the polarization effect in the mask. It is common knowledge that a small mask pattern is considered as the wave guide of transmission light. The induced polarization effect shows the different aspects between the conventional mask and the attenuated phase-shift mask (PSM). In this paper, we considered the effects of polarization state as a function of mask properties. The aerial image depends on the polarization states induced by the mask. We evaluated the performances of the conventional mask and the attenuated PSM by using the Solid-E (TM) simulation and AIMS (TM) (Aerial Image Measurement System) tool along with real wafer printing.
en_US
INST PURE APPLIED PHYSICS
immersion
lithography
mask
polarization
Which Mask is Preferred for Sub-60 nm Node Imaging?
Article
10.1143/JJAP.46.6124
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Kim, Sung-Hyuck
Kim, Soon-Ho
Kim, Yong-Hoon
Lee, Jeung-Woo
Woo, Sang-Gyun
Cho, Han-Ku
Oh, Hye-Keun
2007212719
E
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]
DEPARTMENT OF APPLIED PHYSICS
hyekeun