전형탁
2019-11-20T11:46:25Z
2019-11-20T11:46:25Z
2017-02
CURRENT APPLIED PHYSICS, v. 17, no. 2, page. 230-234
1567-1739
1878-1675
https://www.sciencedirect.com/science/article/pii/S1567173916302309?via%3Dihub
https://repository.hanyang.ac.kr/handle/20.500.11754/112797
The role of a Ti nano-layer embedded in TaOx-based devices operating with conductive filaments consisting of oxygen vacancies was investigated. The Ti nano-layer was embedded in three different positions: the top interface (Au/TaOx), bottom interface (TaOx/TiN), and both interfaces. The embedded Ti nano-layer serves as not only an oxygen reservoir but also a tunneling barrier in the case of the top interface. The position of the Ti nano-layer and its thickness play important roles in the resistive switching behaviors. In addition, the effect of the current compliance on the resistive switching behaviors was evaluated. The different resistive switching behaviors were investigated using current voltage sweep measurements and X-ray photoelectron spectroscopy. The non-linear behavior of the low resistance state could be controlled by the top interface and current compliance. The current of the high resistance state could be controlled by the bottom interface. It is noteworthy that only 1.5-nm-thick Ti nano-layer can adjust the non-linear behavior of the low resistance state at top interface and the current of the high resistance state at bottom interface. (C) 2016 Elsevier B.V. All rights reserved.
This work was supported by a National Research Foundation of Korea grant funded by the Korean government (NRF-2015R1A2A1A10052324), Republic of Korea.
en_US
ELSEVIER SCIENCE BV
Resistive switching
Interface
TaOx
Non-linear
Current compliance
Resistive switching behaviors of Ti nano-layer embedded TaOx-based devices
Article
2
17
10.1016/j.cap.2016.08.020
230-234
CURRENT APPLIED PHYSICS
Jeon, Heeyoung
Park, Jingyu
Jang, Woochool
Kim, Hyunjung
Lee, Kunyoung
Shin, Changhee
Lee, Jaemin
Jeon, Hyeongtag
2017001952
S
COLLEGE OF ENGINEERING[S]
DIVISION OF MATERIALS SCIENCE AND ENGINEERING
hjeon