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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2015-11The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack최창환
2015-11Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics최창환
2015-09Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors최창환
2015-01Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer최창환
2015-11Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing최창환

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