Browsing byAuthor오새룬터

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 30 of 38

Issue DateTitleAuthor(s)
2019-07Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries오새룬터
2018-11Artificial optic-neural synapse for colored and color-mixed pattern recognition오새룬터
2020-08Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition오새룬터
2021-12Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect오새룬터
2018-11Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates오새룬터
2023-01-10Current Boosting of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors under Driving Conditions오새룬터
2023-09Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory오새룬터
2020-10Device Scalability of InGaZnO TFTs for Next-Generation Displays오새룬터
2023-10Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm오새룬터
2015-09Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates오새룬터
2017-08Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer오새룬터
2016-04Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors오새룬터
2016-04Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (vol 108, 141604, 2016)오새룬터
2017-06Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors오새룬터
2009-05Effect of Parasitic Resistance and Capacitance on Performance of InGaAs HEMT Digital Logic Circuits오새룬터
2018-07Effects of Repetitive Mechanical Stress on Flexible Oxide Thin-Film Transistors and Stress Reduction via Additional Organic Layer오새룬터
2022-01Excessive Oxygen Peroxide Model-Based Analysis of Positive-Bias-Stress and Negative-Bias-Illumination-Stress Instabilities in Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors오새룬터
2017-02Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponential functions오새룬터
2016-11Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition오새룬터
2008-04Hole mobility characteristics under electrical stress for surface-channel germanium transistors with high-k gate stack오새룬터
2021-06Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor오새룬터
2023-10Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits오새룬터
2020-10Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing오새룬터
2020-10(Invited)Device Scalability of InGaZnO TFTs for Next-Generation Displays오새룬터
2022-11Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory오새룬터
2023-10Lifetime estimation of thin-film transistors in organic emitting diode display panels with compensation오새룬터
2017-02Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone오새룬터
2017-09The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer오새룬터
2020-01Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability오새룬터
2009-12A Physics-Based Compact Model of III-V FETs for Digital Logic Applications: Current-Voltage and Capacitance-Voltage Characteristics오새룬터

BROWSE