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Showing results 1 to 30 of 43

Issue DateTitleAuthor(s)
2006-07A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes심종인
2007-043차원 회로 모델링을 이용한 청색 GaN/InGaN LED의 전류 확산 효과에 관한 연구심종인
2017-04Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement심종인
2015-02Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation심종인
2008-08An Analytical Model of the Intracavity Optical Second Harmonic Generation in a Vertical-External-Cavity Surface-Emitting Laser심종인
2017-10Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes심종인
2018-11Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters심종인
2019-05Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes심종인
2006-07Design and fabrication of a transmitter optical subassembly (TOSA) in 10-Gb/s small-form-factor pluggable (XFP) transceiver심종인
2008-04Effect of Electrode Pattern on Light Emission Distribution in InGaN/GaN Light Emitting Diode심종인
2007-08Effect of Waveguide Structure for Suppression of Ripples in the Far-Field Pattern of a 405-nm InGaN-GaN Laser Diode심종인
2016-09Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes심종인
2019-07Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure심종인
2008-03An Embedded Wide-Band Spiral Inductor for 10 Gb/s Optical Transceiver Applications심종인
2019-02Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes심종인
2006-10Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics심종인
2018-02Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well light-emitting diodes심종인
2016-11Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes심종인
2007-11High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers심종인
2006-10Highly integrated 10Gb/s optical sub-assembly and its circuit modeling심종인
2008-04Improved ESD voltage by inserting floating metal ring in GaN-based light emitting diodes심종인
2016-04Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes심종인
2017-10Interactive Study of Electroreflectance and Photocurrent Spectra in InGaN/GaN-Based Blue LEDs심종인
2019-09Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs심종인
2018-07Investigation of luminance degradation in organic light-emitting diodes by impedance spectroscopy심종인
2017-07Investigation of optical processes in InGaN-based light-emitting diodes using electroreflectance and photocurrent spectroscopies심종인
2018-04Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures심종인
2008-06Low-Detuning Operation of Electroabsorption Modulator as a Zero-Bias Optical Transceiver for Picocell Radio-Over-Fiber Applications심종인
2005-10A Measurement method of the resonantly enhanced gain spectrum and its effect on second harmonic generation in Vertical-External-Cavity Surface-Emitting Laser(VECSEL)심종인
2006-12A measurement of modal gain profile and its effect on the lasing performance in vertical-external-cavity surface-emitting lasers심종인

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