2020-01 | Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics | 최창환 |
2012-10 | Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate | 최창환 |
2015-11 | Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing | 최창환 |
2016-12 | Residue-Free Silver Nano Patterns Fabricated by Reverse Direct Imprinting | 최창환 |
2011-02 | Ruthenium based metals using atomic vapor deposition for gate electrode applications | 최창환 |
2019-05 | Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applications | 최창환 |
2012-10 | Site-specific synthesis of ZnO nanocrystalline networks via a hydrothermal method | 최창환 |
2012-06 | SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries | 최창환 |
2020-09 | Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer | 최창환 |
2018-08 | Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing | 최창환 |
2013-11 | Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing | 최창환 |
2011-12 | Structure, Raman, and photoluminescence properties of SnO2/MgO core-shell nanowires | 최창환 |
2019-07 | Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device | 최창환 |
2012-09 | A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal-Oxide-Semiconductor Device Integration Applications | 최창환 |
2017-05 | Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric | 최창환 |
2021-02 | Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material | 최창환 |
2012-02 | Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal-Oxide-Semiconductor Capacitors | 최창환 |
2016-10 | Suppression of boron diffusion using carbon co-implantation in DRAM | 최창환 |
2020-07 | Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering | 최창환 |
2020-10 | Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor | 최창환 |
2016-09 | Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post Annealing | 최창환 |
2019-08 | Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics | 최창환 |
2012-01 | Thickness and material dependence of capping layers on flatband voltage (V-FB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications | 최창환 |
2018-10 | Thin Si wafer substrate bonding and de-bonding below 250 degrees C for the monolithic 3D integration | 최창환 |
2021-01 | Towards engineering in memristors for emerging memory and neuromorphic computing: A review | 최창환 |
2019-04 | Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics | 최창환 |
2020-08 | Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH3NH3)PbI3 and low operating power energy (similar to 47 fJ/mu m(2)) | 최창환 |
2018-04 | Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET | 최창환 |