| 2021-12 | C-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) and high-k charge trapping film for flash memory application | 최창환 |
| 2022-02 | Cellulose Nanocrystal Based Bio-Memristor as a Green Artificial Synaptic Device for Neuromorphic Computing Applications | 최창환 |
| 2016-11 | Characteristics of Nano-Laminated Al-Doped ZnO (AZO) Multilayers | 최창환 |
| 2013-12 | Characteristics of Radio Frequency-Sputtered ZnS on the Flexible Polyethylene Terephthalate (PET) Substrate | 최창환 |
| 2020-06 | The coexistence of threshold and memory switching characteristics of ALD HfO(2)memristor synaptic arrays for energy-efficient neuromorphic computing | 최창환 |
| 2017-10 | Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switching | 최창환 |
| 2018-01 | Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device | 최창환 |
| 2020-11 | Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems | 최창환 |
| 2020-09 | Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices | 최창환 |
| 2012-10 | Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors | 최창환 |
| 2016-12 | The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction | 최창환 |
| 2016-11 | The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector | 최창환 |
| 2014-09 | The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition | 최창환 |
| 2022-03 | The effective Work-Function of atomic layer deposited TaN thin film using TBTDET precursor and NH3 reactant gas | 최창환 |
| 2015-11 | The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack | 최창환 |
| 2016-11 | The Effects of a Thermal Recovery Process in In-Ga-Zn-O (IGZO) Thin Films Transistor | 최창환 |
| 2013-03 | Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices | 최창환 |
| 2022-10 | Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film | 최창환 |
| 2011-05 | The effects of post-annealing on the performance of ZnO thin film transistors | 최창환 |
| 2017-05 | The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor | 최창환 |
| 2017-04 | The Effects of Substrate Temperature on the Properties of Kesterite Cu2ZnSnS4 Thin Films Deposited Using a Single Quaternary Target | 최창환 |
| 2012-10 | The electrical and structural properties of HfO2/SrTiO3 stacked gate dielectric with TiN metal gate electrode | 최창환 |
| 2015-11 | Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics | 최창환 |
| 2021-11 | Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing | 최창환 |
| 2018-08 | Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device | 최창환 |
| 2012-08 | Fabrication, structure, and photoluminescence of GeO2/ZnO core-shell nanorods | 최창환 |
| 2017-09 | Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium | 최창환 |
| 2015-09 | Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors | 최창환 |
| 2020-11 | Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices | 최창환 |
| 2019-10 | Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors | 최창환 |
