| 2006-02 | Mask error enhancement factor variation with pattern density for 65 nm and 90 nm line widths | 오혜근 |
| 2008-11 | A mask generation approach to double patterning technology with inverse lithography | 오혜근 |
| 2006-06 | Mask haze measurement by spectroscopic ellipsometry | 오혜근 |
| 2016-05 | Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography | 오혜근 |
| 2016-09 | Mechanical stress induced by external forces in the extreme ultraviolet pellicle | 오혜근 |
| 2006-08 | Modeling for Resist Reflow of an Elongated Contact Hole | 오혜근 |
| 2018-05 | modeling of thermomechanical changes of euv mask and their dependence on absorber variation | 오혜근 |
| 2015-10 | Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction | 오혜근 |
| 2016-03 | Non-isotropic shadow effect with various pattern direction in anamorphic high numerical aperture system | 오혜근 |
| 2005-07 | Numerical investigation of defect printability in extreme ultraviolet (EUV) reflector: Ru/Mo/Si multilayer system | 오혜근 |
| 2006-02 | Numerical modeling of absorber characteristics for EUVL | 오혜근 |
| 2006-01 | Optical lithography simulator for the whole resist process | 오혜근 |
| 2006-02 | Optimization of chromeless phase mask by comparing scattering bars with zebra patterns | 오혜근 |
| 2008-09 | Optimum Biasing for 45 nm Node Chromeless and Attenuated Phase Shift Mask | 오혜근 |
| 2008-02 | Optimum biasing for 45 nm node chromeless and attenuated phase shift mask | 오혜근 |
| 2008-02 | Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness | 오혜근 |
| 2015-04 | Patterning dependence on the mask defect for extreme ultraviolet lithography | 오혜근 |
| 2008-11 | Patterning of 32 nm 1:1 Line and Space by Resist Reflow Process | 오혜근 |
| 2007-02 | Photoresist adhesion effect of resist reflow process | 오혜근 |
| 2007-09 | Photoresist Adhesion Effect of Resist Reflow Process | 오혜근 |
| 2007-10 | Process Extension Techniques for Optical Lithography: Thermal Treatment, Polarization and Double Patterning | 오혜근 |
| 2007-04 | The process latitude dependency on local photomask haze defect in 70 nm binary intensity mask | 오혜근 |
| 2005-05 | Reduction in the Mask Error Factor by Optimizing the Diffraction Order of a Scattering Bar in Lithography | 오혜근 |
| 2005-04 | Reduction of the Absorber Shadow Effect by Changing the Absorber Side Wall Angle in Extreme Ultraviolet Lithography | 오혜근 |
| 2006-02 | Reflow modeling for elongated contact hole shape | 오혜근 |
| 2018-06 | Removal of EUV exposed hydrocarbon from Ru capping layer of EUV mask using the mixture of alkaline solutions and organic solvents | 오혜근 |
| 2007-04 | Resist Reflow Modeling Including Surface Tension and Bulk Effect | 오혜근 |
| 2008-02 | Resist reflow process for arbitrary 32 nm node pattern | 오혜근 |
| 2006-02 | Simulation of mask induced polarization effect on imaging in immersion lithography | 오혜근 |
| 2006-07 | Simulation of rectangular isolated pattern images by applying phase shift masks in high-exposure gaps to protect LCD photo masks | 오혜근 |
