| 2016-04 | Eco-friendly photolithography using water-developable pure silk fibroin | 오혜근 |
| 2004-06 | Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall | 오혜근 |
| 2006-02 | The effect of transmission reduction by reticle haze formation | 오혜근 |
| 2008-08 | Ellipsometry for Pellicle-Covered Surface | 오혜근 |
| 2003-12 | Ellipsometry 에서의 calibration 및 입사면 고정형 ellipsometer | 오혜근 |
| 2003-12 | Ellipsometry 에서의 calibration 및 입사면 고정형 ellipsometer | 오혜근 |
| 2006-02 | EUV lithography simulation for the 32 nm node | 오혜근 |
| 2005-05 | The evaluation of aberration effects according to pattern shape and duty ratio | 오혜근 |
| 2006-07 | Evaluation of partial coherent imaging using the modulation transfer function in immersion lithography | 오혜근 |
| 2006-02 | Evaluation of partial coherent imaging using the transfer function in immersion lithography | 오혜근 |
| 2004-05 | Exposure simulation of electron beam microcolumn lithography | 오혜근 |
| 2004-06 | The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method | 오혜근 |
| 2003-02 | The Extraction of Exposure Parameters by Using Neural Networks | 오혜근 |
| 2000-02 | Extraction of Exposure Parameters for 193 nm Chemically Amplified Resist and its Application to Simulation | 오혜근 |
| 2001-07 | Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and its Application to Simulation | 오혜근 |
| 2001-07 | Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and Its Application to Simulation | 오혜근 |
| 2016-03 | Feasibility of a new absorber material for high NA extreme ultraviolet lithography | 오혜근 |
| 2008-11 | Haze defects due to pellicle adhesive | 오혜근 |
| 2009-11 | Heat conduction from hot plate to photoresist on top of wafer including heat loss to the environment | 오혜근 |
| 2008-11 | Heat conduction to photoresist on top of wafer during post exposure bake process: I. Numerical Approach | 오혜근 |
| 2008-11 | Heat conduction to photoresist on top of wafer during post exposure bake process:II. Application | 오혜근 |
| 2016-01 | Impact of a deformed extreme ultraviolet pellicle in terms of the critical dimension uniformity | 오혜근 |
| 2015-07 | Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity | 오혜근 |
| 2017-03 | Impact of non-uniform wrinkles for a multi-stack pellicle in EUV lithography | 오혜근 |
| 2016-05 | The impact of the residual stress on the EUV pellicle | 오혜근 |
| 2017-01 | Impact of transmission non-uniformity of a wrinkled EUV pellicle for N5 patterning under various illuminations | 오혜근 |
| 2006-02 | Improvement of column spacer uniformity in a TFT LCD panel | 오혜근 |
| 2017-06 | Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1×-nm patterning in isomorphic and anamorphic lithography | 오혜근 |
| 2017-10 | Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle | 오혜근 |
| 2008-12 | Influence of mask feature on the diffracted light in proximity and contact lithography | 오혜근 |
