| 1999-12 | Characteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delayCharacteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delayCharacteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delay | 오혜근 |
| 2006-11 | Chromeless phase lithography using scattering bars and zebra patterns | 오혜근 |
| 2005-03 | Contact hole reflow by finite element method | 오혜근 |
| 2008-02 | Critical dimension control for 32 nm node random contact hole array using resist reflow process | 오혜근 |
| 2007-09 | Critical dimension control for 32 nm random contact hole array with resist reflow process | 오혜근 |
| 2017-09 | Critical dimension variation caused by wrinkle in extreme ultra-violet pellicle for 3-nm node | 오혜근 |
| 2005-11 | Defect characterization of Ru/Mo/Si EUV reflector by optical modeling | 오혜근 |
| 2005-07 | Determination of the optical functions of various liquids by rotating compensator multichannel spectroscopic ellipsometry | 오혜근 |
| 2007-08 | Development of Calibration-Free Imaging Ellipsometry Using Dual-Rotation of Polarizer and Analyzer | 오혜근 |
| 2002-06 | Development of multichannel ellipsometry with synchronously rotating polarizer and analyzer | 오혜근 |
| 2016-04 | Eco-friendly photolithography using water-developable pure silk fibroin | 오혜근 |
| 2004-06 | Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall | 오혜근 |
| 2006-02 | The effect of transmission reduction by reticle haze formation | 오혜근 |
| 2008-08 | Ellipsometry for Pellicle-Covered Surface | 오혜근 |
| 2003-12 | Ellipsometry 에서의 calibration 및 입사면 고정형 ellipsometer | 오혜근 |
| 2003-12 | Ellipsometry 에서의 calibration 및 입사면 고정형 ellipsometer | 오혜근 |
| 2006-02 | EUV lithography simulation for the 32 nm node | 오혜근 |
| 2005-05 | The evaluation of aberration effects according to pattern shape and duty ratio | 오혜근 |
| 2006-07 | Evaluation of partial coherent imaging using the modulation transfer function in immersion lithography | 오혜근 |
| 2006-02 | Evaluation of partial coherent imaging using the transfer function in immersion lithography | 오혜근 |
| 2004-05 | Exposure simulation of electron beam microcolumn lithography | 오혜근 |
| 2004-06 | The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method | 오혜근 |
| 2003-02 | The Extraction of Exposure Parameters by Using Neural Networks | 오혜근 |
| 2000-02 | Extraction of Exposure Parameters for 193 nm Chemically Amplified Resist and its Application to Simulation | 오혜근 |
| 2001-07 | Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and its Application to Simulation | 오혜근 |
| 2001-07 | Extraction of Exposure Parameters for 193-nm Chemically Amplified Resist and Its Application to Simulation | 오혜근 |
| 2016-03 | Feasibility of a new absorber material for high NA extreme ultraviolet lithography | 오혜근 |
| 2008-11 | Haze defects due to pellicle adhesive | 오혜근 |
| 2009-11 | Heat conduction from hot plate to photoresist on top of wafer including heat loss to the environment | 오혜근 |
| 2008-11 | Heat conduction to photoresist on top of wafer during post exposure bake process: I. Numerical Approach | 오혜근 |
