| 2001-02 | 193nm 화학 증폭형 감광제 시뮬레이션을 위한 노광후 지연 효과에 대한 연구 | 오혜근 |
| 2001-02 | 193nm용 화학 증폭형 감광제의 노광 후 열처리 과정중 두께 변화에 관한 연구 | 오혜근 |
| 2008-11 | 22 nm 1:1 line and space patterning by using double patterning and resist reflow process | 오혜근 |
| 2008-02 | 22 nm node contact hole formation in extreme ultra-violet lithography | 오혜근 |
| 2008-02 | 32 nm 1:1 line and space patterning by resist reflow process | 오혜근 |
| 2008-01 | 32 nm 1:1 Line and Space Patterning by Resist Reflow Process | 오혜근 |
| 2007-02 | 32 nm pattern collapse modeling with radial distance and rinse speed | 오혜근 |
| 2007-08 | 32nm Pattern Collapse Modeling with Radial Distance and Rinse Speed | 오혜근 |
| 2007-01 | Acid Diffusion Length Corresponding to Post Exposure Bake Time and Temperature | 오혜근 |
| 2008-11 | Acid diffusion length dependency for 32 nm node attenuated and chromeless phase shift mask | 오혜근 |
| 2007-09 | Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask | 오혜근 |
| 2008-06 | Aerial Image Characteristics of a Modified Absorber Model for Extreme Ultraviolet Lithography (EUVL) | 오혜근 |
| 2004-11 | Aerial image characterization for defects in an extreme-ultraviolet mask | 오혜근 |
| 2004-05 | Aerial image characterization for the defects in the extreme ultraviolet mask | 오혜근 |
| 2003-12 | Aerial image prediction for mask defect in extreme ultraviolet lithography | 오혜근 |
| 2004-11 | Angular dependency of off-axis illumination on 100 nm width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system | 오혜근 |
| 2008-06 | Anisotropic resist reflow process simulation for 22 nm elongated contact holes | 오혜근 |
| 2016-08 | Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture system | 오혜근 |
| 2008-05 | Application of ellipsometry in immersion lithography | 오혜근 |
| 2017-03 | Arc-shaped slit effect of EUV lithography with anamorphic high NA system in terms of critical dimension variation | 오혜근 |
| 2005-06 | ArF photoresist parameter optimization for mask error enhancement factor reduction | 오혜근 |
| 2005-10 | ArF photoresist parameter optimization for mask error enhancement factor reduction | 오혜근 |
| 2004-11 | Bulk effects of the thermal flow resists | 오혜근 |
| 2005-06 | Bulk effects of thermal flow resists | 오혜근 |
| 2002-10 | Bulk Image Formation of Scalar Modeling in a Photoresist | 오혜근 |
| 2005-06 | Calibration-Free Multichannel Ellipsometry for Retardance Measurement | 오혜근 |
| 2017-03 | CD Error Caused by Aberration and Its Possible Compensation by Optical Proximity Correction in Extreme-Ultraviolet Lithography | 오혜근 |
| 2002-03 | CD Prediction by Threshold Energy Resist Model | 오혜근 |
| 2007-02 | Characteristics and prevention of pattern collapse in EUV lithography | 오혜근 |
| 1999-12 | Characteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delay | 오혜근 |
