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Showing results 139 to 168 of 198

Issue DateTitleAuthor(s)
2005-04Ohmic contacts of Pd/Zn/M(= Pd or Pt)/Au to p-type InP심종인
2005-04Ohmic Contacts of Pd/Zn/M(=Pd of Pt)/Au to p-Type InP심종인
2005-05Ohmic Contacts of Pd/Zn/Pt(or Pd)Au Materials to P-TYPE InP심종인
2016-08On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes심종인
2011-07Optical gain of compressively strained InGaAs/InP multiple quantum wires심종인
2018-05Optoelectronic performance variations in InGaN/GaN multiple-quantum-well light-emitting diodes: Effects of potential fluctuation심종인
2002-02PDP 시스템의 EMI 예측을 위한 회로 모델링 및 실험적 검증심종인
2015-09Performance analysis of light-emitting diodes by optoelectronic characterizations심종인
2020-02Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra심종인
2001-11PIN PD의 TO-can package 등가회로 설계 및 회로소자 값 추출심종인
2004-12Pre-breakdown suppression in planar InP/InGaAs avalanche photodiode using deep floating guard ring심종인
2016-01Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis심종인
2009-08Rate equation analysis of efficiency droop in InGaN light-emitting diodes심종인
2010-03Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes심종인
2020-01Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes심종인
2019-11Review-Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes심종인
2002-01RF 패키지 인덕턴스가 실리콘 기판 커플링에 미치는 영향 모델링 및 해석심종인
2001-12RF 회로 설계를 위한 실리콘 기판 커플링 모델링, 해석 및 기판 파라미터 추출심종인
2000-08S-parameter-Measurement-Based High-Speed Signal Transient Characterization of VLSI Interconnects on SiO2-Si Substrate심종인
2001-05Silicon substrate coupling noise modeling, analysis, and experimental verification for mixed signal integrated circuit design심종인
2007-02A Simple Method for Measurement of the ¥á-Factor in Semiconductor Fabry-Perot Lasers Operating above Threshold심종인
2004-02Slope Efficiency and Dynamic Range of Traveling-Wave Multiple-Quantum-Well Electroabsorption Modulators심종인
2010-07Strain relaxation effect on electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires심종인
2010-05Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures심종인
2012-04Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence심종인
2016-01Study of the ideality factor of blue light-emitting diodes using the photovoltaic characteristics심종인
2013-12Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes심종인
2003-07Tapered Mesa 구조를 이용한 높은 단일모드 생성 DFB-LD심종인
2016-02Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)심종인
2009-06Theoretical Analysis on the Light Extraction Efficiency of GaN-Based Light-Emitting Diodes by Using the Ray Tracing Method심종인

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