| 2004-04 | Analytical Models and Algorithms for the Efficient Signal Integrity Verification of Inductance-Effect-Prominent Multicoupled VLSI Circuit Interconnects | 심종인 |
| 2002-04 | Analytical Signal Integrity Verification Models for Inductance-Dominant Multi-Coupled VLSI Interconnects | 심종인 |
| 2011-02 | Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD | 심종인 |
| 2001-12 | Asymmetric Output Characteristics in 1.3-μm Spot-Size Converted Laser Diodes | 심종인 |
| 2017-10 | Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes | 심종인 |
| 2013-06 | Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures | 심종인 |
| 2015-12 | Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics | 심종인 |
| 2003-11 | A Compact Multi-Layer IC Package Model for Efficient Simulation, Analysis, and Design of High-Performance VLSI Circuits | 심종인 |
| 2015-02 | Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes | 심종인 |
| 2013-09 | Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes | 심종인 |
| 2018-11 | Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters | 심종인 |
| 2013-08 | Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis | 심종인 |
| 2019-05 | Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes | 심종인 |
| 2019-01 | Current-voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters | 심종인 |
| 2004-09 | A Decoupling Technique for Efficient Timing Analysis of VLSI Interconnects With Dynamic Circuit Switching | 심종인 |
| 2004-11 | Dependence of Transmission Curves on Input Optical Power in an Electroabsorption Modulator | 심종인 |
| 2004-05 | Design and Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode(APD) based on the Non-local Model | 심종인 |
| 2006-07 | Design and fabrication of a transmitter optical subassembly (TOSA) in 10-Gb/s small-form-factor pluggable (XFP) transceiver | 심종인 |
| 2013-05 | Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy | 심종인 |
| 2008-07 | Detuning Effects in an Electroabsorptin Modulator as a Transceiver for Picocell Radio-over-Fiber Application | 심종인 |
| 2013-07 | Dip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain | 심종인 |
| 2013-07 | Droop studies for high-performance InGaN blue light-emitting diodes | 심종인 |
| 2003-06 | Dynamic range of traveling-wave multiple quantum-well electroabsorption modulators | 심종인 |
| 2023-08 | EAM-integrated DBR-LD with 16-channel and 100-Gbps/lambda PAM-4 modulation | 심종인 |
| 2011-02 | Effect of current spreading on the efficiency droop of InGaN light-emitting diodes | 심종인 |
| 2021-10 | Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes | 심종인 |
| 2008-04 | Effect of Electrode Pattern on Light Emission Distribution in InGaN/GaN Light Emitting Diode | 심종인 |
| 2020-03 | Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes | 심종인 |
| 2010-07 | Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes | 심종인 |
| 2016-01 | Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes | 심종인 |
