| 2015-03 | Macro model for stochastic behavior of resistance distribution of magnetic tunnel junction | 송윤흡 |
| 2014-06 | Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석 | 송윤흡 |
| 2017-07 | Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory | 송윤흡 |
| 2016-05 | Memory characteristics of capacitors with poly-GaAs floating gates | 송윤흡 |
| 2020-11 | Memory Characteristics of Capacitors with Poly-GaP Floating Gates | 송윤흡 |
| 2016-08 | Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells | 송윤흡 |
| 2014-06 | MTJ 버퍼층의 Ta/Ru 층의 두께 및 공정 온도 조건에 따른 Roughness에 대한 연구 | 송윤흡 |
| 2011-09 | Multilevel Charge Storage in a Multiple Alloy Nanodot Memory | 송윤흡 |
| 2014-03 | Multiple phase change structure for the scalable phase change random access memory array | 송윤흡 |
| 2012-10 | Multiresistance Characteristics of PCRAM With Ge1Cu2Te3 and Ge2Sb2Te5 Films | 송윤흡 |
| 2020-10 | A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory | 송윤흡 |
| 2015-09 | Novel device structure for phase change memory toward low-current operation | 송윤흡 |
| 2016-02 | Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory | 송윤흡 |
| 2012-02 | A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference | 송윤흡 |
| 2020-12 | A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations | 송윤흡 |
| 2019-11 | A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide Channel | 송윤흡 |
| 2019-02 | A novel three-dimensional NAND flash structure for improving the erase performance | 송윤흡 |
| 2014-09 | ON-STATE DARIN CURRENT MODELING FOR GRAIN AND GRAIN BOUNDARY EFFECT OF THE POLYSILICON MATERIALS AT VARIOUS TEMPERATURES | 송윤흡 |
| 2014-01 | Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architecture | 송윤흡 |
| 2016-11 | Poly-GaAs 채널을 갖는 3D NAND flash memory 전기적 특성 연구 | 송윤흡 |
| 2014-09 | Programming Characteristics on Three-Dimensional NAND Flash Structure Using Edge Fringing Field Effect | 송윤흡 |
| 2017-01 | Reliability of magnetic tunnel junctions with a spinel MgAl2O4 film | 송윤흡 |
| 2013-04 | Research of Bulk Erase Operation in Vertical Three-Dimensional Cell Array Architecture | 송윤흡 |
| 2014-09 | Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature | 송윤흡 |
| 2017-06 | Simulation of Residual Stress and Its Impact on a Poly-Silicon Channel for Three-Dimensional, Stacked, Vertical-NAND Flash Memories | 송윤흡 |
| 2013-08 | Statistical Characterization of Noise and Interference in NAND Flash Memory | 송윤흡 |
| 2017-02 | Stochastic macromodel of magnetic tunnel junction resistance variation and critical current dependence on resistance variation for SPICE simulation | 송윤흡 |
| 2014-06 | STT-MRAM의 새로운 자기 기준 감지 회로 | 송윤흡 |
| 2017-10 | TDDB modeling depending on interfacial conditions in magnetic tunnel junctions | 송윤흡 |
| 2017-04 | Temperature Dependence According to Grain Boundary Potential Barrier Variation in Vertical NAND Flash Cell with Polycrystalline-Silicon Channel | 송윤흡 |
