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Showing results 12 to 41 of 104

Issue DateTitleAuthor(s)
2019-07Cadmium sulfide nanostructures: Influence of morphology on the photocatalytic degradation of erioglaucine and hydrogen generation박태주
2020-01Characterization of oxide nanocomposites formed at annealed TiN/SnS2 heterostructure thin film박태주
2021-12Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition박태주
2021-12Chemical mechanism of formation of two-dimensional electron gas at the Al˂inf˃2˂/inf˃O˂inf˃3˂/inf˃/TiO˂inf˃2˂/inf˃ interface by atomic layer deposition박태주
2020-04Comparative investigation of ZnO morphologies for optimal CdS quantum-dot deposition via pseudo-SILAR method박태주
2016-04Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts박태주
2016-11Degradation mechanism and enhancement solutions for fieldeffect passivation in nanostructured Si solar cells박태주
2017-08Densification of similar to 5 nm-thick SiO2 layers by nitric acid oxidation박태주
2019-10Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate박태주
2020-01Design Guidelines of Insulator for Improving Stability and Performance of Nanoelectrocatalyst/Insulator/Semiconductor Photoelectrochemical Cells박태주
2018-11Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method박태주
2020-12Direct Evidence of Electronic Interaction at the Atomic-Layer-Deposited MoS2 Monolayer/SiO2 Interface박태주
2020-12Direct Evidence of Electronic Interaction at the Atomic-Layer-Deposited MoS2Monolayer/SiO2Interface박태주
2021-02Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1-xGex (x=0-0.3)박태주
2023-01Effective strategies for improved optoelectronic properties of graphitic carbon nitride: A review박태주
2022-12-01Effective strategies for improved optoelectronic properties of graphitic carbon nitride: A review박태주
2009-07Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si박태주
2015-12Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells박태주
2016-03Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation박태주
2017-04Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2박태주
2009-07Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone박태주
2016-08Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2O3 Coating Layer for UV-Protection Applications박태주
2018-12Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells박태주
2015-03Enhanced performance of PbS-sensitized solar cells via controlled successive ionic-layer adsorption and reaction박태주
2021-03Enhanced response of the photoactive gas sensor on formaldehyde using porous SnO2@TiO2 heterostructure driven by gas-flow thermal evaporation and atomic layer deposition박태주
2021-02Enhanced selectivity of atomic layer deposited Ru thin films through the discrete feeding of aminosilane inhibitor molecules박태주
2017-10Enhanced visible-light photocatalytic activity of ZnS/g-C3N4 type-II heterojunction nanocomposites synthesized with atomic layer deposition박태주
2018-10Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures박태주
2018-10Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (˂10 nm) Film Heterostructures박태주
2021-05Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods박태주

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