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Showing results 170 to 199 of 351

Issue DateTitleAuthor(s)
2011-02Generation of Pad Debris during Oxide CMP Process and Its Role in Scratch Formation박진구
2011-02Generation of Pad Debris during Oxide CMP Process and Its Role in Scratch Formation박진구
2013-05Hybrid Cleaning Technology for Enhanced Post-Cu/Low-Dielectric Constant Chemical Mechanical Planarization Cleaning Performance박진구
2013-05Hybrid Cleaning Technology for Enhanced Post-Cu/Low-Dielectric Constant Chemical Mechanical Planarization Cleaning Performance박진구
2020-02Hybrid DHF and N-2 jet spray cleaning for silicon nitride and metal layer DRAM patterns박진구
2020-02Hybrid DHF and N2 jet spray cleaning for silicon nitride and metal layer DRAM patterns박진구
2011-07Hydrophobic Modification of Diamond Conditioner for Prevention of Particle Adhesion During Oxide CMP박진구
2011-07Hydrophobic Modification of Diamond Conditioner for Prevention of Particle Adhesion During Oxide CMP박진구
2013-11The impact of diamond conditioners on scratch formation during chemical mechanical planarization (CMP) of silicon dioxide박진구
2017-03Impact of non-uniform wrinkles for a multi-stack pellicle in EUV lithography박진구
2015-03Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography박진구
2015-08Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography박진구
2004-07In-Situ Characterization of Electrochemical and Frictional Behaviors During Copper CMP박진구
2017-10Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle박진구
2017-10Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle박진구
2012-07Influence of anionic polyelectrolyte addition on ceria dispersion behavior for quartz chemical mechanical polishing박진구
2012-10Influence of anionic polyelectrolyte addition on ceria dispersion behavior for quartz chemical mechanical polishing박진구
2016-09Influence of non-uniform intensity distribution of deformed pellicle for N7 patterning박진구
2016-09Influence of non-uniform intensity distribution of deformed pellicle for N7 patterning박진구
2003-05Interaction Forces Between Silica Particles and Wafer Surfaces during Chemical Mechanical Planarization of Copper박진구
2006-06Interfacial and electrokinetic characterization of IPA solutions related to semiconductor wafer drying and cleaning박진구
2014-11Investigation of Cu-BTA complex formation and removal on various Cu surface conditions박진구
2016-05Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process박진구
2016-10Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process박진구
2015-02Investigation of oxide layer removal mechanism using reactive gases박진구
2015-03Investigation of oxide layer removal mechanism using reactive gases박진구
2019-10Investigation of particle agglomeration with in-situ generation of oxygen bubble during the tungsten chemical mechanical polishing (CMP) process박진구
2008-12Investigation of physical cleaning process window by atomic force microscope박진구
2023-08Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing박진구
2013-05Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization박진구
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