| 2020-03 | J/psi and psi(2S) production at forward rapidity in p plus p collisions at root s=510 GeV | 강보수 |
| 1999-10 | Lanthanum-substituted bismuth titanate for use in non-volatile memories | 강보수 |
| 2006-05 | Low field magneto-transport properties of (La0.7Sr0.3MnO3)0.5:(ZnO)0.5 nanocomposite films | 강보수 |
| 2009-05 | Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non-volatile memory | 강보수 |
| 2002-07 | Mechanism of low temperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3 capacitors | 강보수 |
| 2023-07 | Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film | 강보수 |
| 2003-03 | Mechanisms for retention loss in ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitors | 강보수 |
| 2008-03 | Mobility enhanced photoactivity in sol-gel grown epitaxial anatase TiO2 Films | 강보수 |
| 2019-03 | Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film | 강보수 |
| 2015-06 | Phase transition phenomenon: A compound measure analysis | 강보수 |
| 2003-01 | Polarization dynamics and retention loss in fatigued PbZr0.4Ti0.6O3 ferroelectric capacitors | 강보수 |
| 2004-04 | Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes | 강보수 |
| 2023-01-04 | Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties | 강보수 |
| 2016-06 | Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process | 강보수 |
| 2005-01 | Retention properties of fully integrated (Bi,La)4Ti3O12 capacitors and their lateral size effects | 강보수 |
| 2009-04 | Stackable all-oxide-based nonvolatile memory with Al2O3 antifuse and p-CuxO/n-InZnOx Diode | 강보수 |
| 2008-03 | Strain relaxation in sol-gel grown epitaxial anatase thin films | 강보수 |
| 2006-02 | Studies on the La substitution site in Bi4-xLaxTi3O12 by polarization-dependent x-ray absorption spectroscopy | 강보수 |
| 2019-04 | Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films | 강보수 |
| 2007-11 | Two series oxide resistors applicable to high speed and high density nonvolatile memory | 강보수 |
| 2008-03 | Write current reduction in transition metal oxide based resistance change memory | 강보수 |
