| 2003-11 | A compact multilayer IC package model for efficient simulation, analysis, and design of high-performance VLSI circuits | 심종인 |
| 1996-10 | A computational method of determining reflectance at abrupt waveguide interfaces | 심종인 |
| 2004-09 | A decoupling technique for efficient timing analysis of VLSI interconnects with dynam.ic circuit switching | 심종인 |
| 2005-10 | A measurement method of the resonantly enhanced gain spectrum and its effect on second harmonic generation in Vertical-External-Cavity Surface-Emitting Laser (VECSEL) | 심종인 |
| 2008-05 | A method for current spreading analysis and electrode pattern design in light-emitting diodes | 심종인 |
| 2007-08 | A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode | 심종인 |
| 2007-02 | A simple method for measurement of the alpha-factor in semiconductor Fabry-Perot lasers operating above threshold | 심종인 |
| 2002-06 | A traveling-wave-based waveform approximation technique for the timing verification of single transmission lines | 심종인 |
| 2011-04 | An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas | 심종인 |
| 2003-12 | Analog Characterization of Low-Voltage MQW Traveling-Wave Electroabsorption Modulators | 심종인 |
| 2017-04 | Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement | 심종인 |
| 2021-03 | Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase | 심종인 |
| 2014-03 | Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes | 심종인 |
| 2015-02 | Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation | 심종인 |
| 2012-03 | Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material | 심종인 |
| 2015-02 | Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes | 심종인 |
| 2016-01 | Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs | 심종인 |
| 2010-06 | Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate | 심종인 |
| 2010-11 | Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation | 심종인 |
| 2021-08 | Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress | 심종인 |
