Browsing byAuthor심종인

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 21 to 40 of 200

Issue DateTitleAuthor(s)
2014-03Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes심종인
2015-02Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation심종인
2012-03Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material심종인
2015-02Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes심종인
2016-01Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs심종인
2010-06Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate심종인
2010-11Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation심종인
2021-08Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress심종인
2004-03Analytical Dynamic Time Delay Model of Strongly Coupled RLC Interconnect Lines Dependent on Switching심종인
2008-08An Analytical Model of the Intracavity Optical Second Harmonic Generation in a Vertical-External-Cavity Surface-Emitting Laser심종인
2004-04Analytical Models and Algorithms for the Efficient Signal Integrity Verification of Inductance-Effect-Prominent Multicoupled VLSI Circuit Interconnects심종인
2002-04Analytical Signal Integrity Verification Models for Inductance-Dominant Multi-Coupled VLSI Interconnects심종인
2011-02Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD심종인
2001-12Asymmetric Output Characteristics in 1.3-μm Spot-Size Converted Laser Diodes심종인
2017-10Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes심종인
2013-06Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures심종인
2015-12Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics심종인
2003-11A Compact Multi-Layer IC Package Model for Efficient Simulation, Analysis, and Design of High-Performance VLSI Circuits심종인
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes심종인
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes심종인

BROWSE